| Part Number | 2N6052 |
|---|---|
| Manufacturer | onsemi |
| Overview |
2N6052
Preferred Device
Darlington Complementary Silicon Power Transistors
This package is designed for general−purpose amplifier and low frequency switching applications.
Features
• High DC Curren.
* High DC Current Gain * hFE = 3500 (Typ) @ IC = 5.0 Adc * Collector *Emitter Sustaining Voltage * @ 100 mA VCEO(sus) = 100 Vdc (Min) * Monolithic Construction with Built *In Base *Emitter Shunt Resistors * This is a Pb *Free Device* MAXIMUM RATINGS (Note 1) Rating Collector *Emitter Voltage Collector *B. |
2N6052 Datasheet
The 2N6052 is a DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR.
| Part Number | 2N6052 |
|---|---|
| Description | POWER COMPLEMENTARY SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 m.
lue
1.17
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP 2N6050 * 2N6051 * 2N6052 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-80 V, VBE=1.5 V VCE= VCEX =-1. |
| Part Number | 2N6052 |
|---|---|
| Description | PNP DARLINGTON POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collect. rent VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N6051 2N6052 2N6051 2N6052 2N6051 2N6052 V(BR)CEO 80 100 1.0 1.0 0.5 0.5 2.0 Vdc ICEO mAdc ICEX mAdc IEBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978. |
| Part Number | 2N6052 |
|---|---|
| Description | PNP Darlington Power Silicon Transistor |
| Manufacturer | VPT Components |
| Overview |
2N6051 & 2N6052
PNP Darlington Power Silicon Transistors
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501 • TO-3 (TO-204AA) Package • Ideal for High Gain Amplifier and Switching Applic.
* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501 * TO-3 (TO-204AA) Package * Ideal for High Gain Amplifier and Switching Applications Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Vol. |