2N6052 Description
2N6052 Preferred Device Darlington plementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications.
2N6052 Key Features
- High DC Current Gain
- hFE = 3500 (Typ) @ IC = 5.0 Adc
- Collector-Emitter Sustaining Voltage
- @ 100 mA
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- This is a Pb-Free Device
- Continuous
- 65 to + 200
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 5