2N6052
Overview
- High DC Current Gain - hFE = 3500 (Typ) @ IC = 5.0 Adc
- Collector-Emitter Sustaining Voltage - @ 100 mA VCEO(sus) = 100 Vdc (Min)
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- This is a Pb-Free Device*
| Part | 2N6052 |
|---|---|
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
| Category | Transistor |
| Manufacturer | onsemi |
| Size | 132.01 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6052 | Comset Semiconductors | POWER COMPLEMENTARY SILICON TRANSISTORS |
| 2N6052 | Microsemi | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6052 | VPT Components | PNP Darlington Power Silicon Transistor |
| 2N6052 | Central Semiconductor | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6052 | Inchange Semiconductor | Silicon PNP Power Transistors |