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2N6052 - PNP DARLINGTON POWER SILICON TRANSISTOR

Download the 2N6052 datasheet PDF. This datasheet also covers the 2N6051 variant, as both devices belong to the same pnp darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6051_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1.0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Derate linearly at 1.