Datasheet Summary
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1)
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC
80 80
2N6052
100 100
Unit
Vdc Vdc Vdc Adc Adc W W
..
@ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range
5.0 0.2 12 150 75 -55 to +175 Max. 1.0
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W
TO-3- (TO-204AA)
- See appendix A for package outline
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