| Part number | 2N6051 |
|---|---|
| Datasheet | 2N6051_MicrosemiCorporation.pdf |
| File Size | 75.69 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | PNP DARLINGTON POWER SILICON TRANSISTOR |
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@ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1.0 C THERMAL CHARACTERISTICS Characteristics , Junction-to-Case Unit 0 C/W TO-3 (TO-204AA) See appendix A for package outline 1) Derate linearly at 1.0 W/0C above TC > +250C (TC = 250C unless otherwise noted) Characteristics Symbol Min. IB = 20 mAdc Turn-Off Time VCC = 30 Vdc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6051 | PNP Darlington Power Silicon Transistor | VPT |
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2N6051 | POWER COMPLEMENTARY SILICON TRANSISTORS | Comset Semiconductors |
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2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | Central Semiconductor |
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2N6051 | Silicon PNP Power Transistors | Inchange Semiconductor |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6080 | RF & MICROWAVE TRANSISTORS |
| 2N6081 | RF & MICROWAVE TRANSISTORS |
| 2N6082 | RF & MICROWAVE TRANSISTORS |
| 2N6083 | RF & MICROWAVE TRANSISTORS |
| 2N6084 | RF & MICROWAVE TRANSISTORS |
| 2N6193 | PNP MEDIUM POWER SILICON TRANSISTOR |
| 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6287 | PNP DARLINGTON POWER SILICON TRANSISTOR |
