| Part number | 2N6051 |
|---|---|
| Download | 2N6051 Datasheet (PDF) |
| File Size | 75.69 KB |
| Manufacturer | Microsemi |
| Description | PNP DARLINGTON POWER SILICON TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
VPT Components |
2N6051 | PNP Darlington Power Silicon Transistor |
Comset Semiconductors |
2N6051 | POWER COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Inchange Semiconductor |
2N6051 | Silicon PNP Power Transistors |
@ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1.0 C THERMAL CHARACTERISTICS Characteristics , Junction-to-Case Unit 0 C/W TO-3 (TO-204AA) See appendix A for package outline 1) Derate linearly at 1.0 W/0C above TC > +250C (TC = 250C unless otherwise noted) Characteristics Symbol Min. IB = 20 mAdc Turn-Off Time VCC = 30 Vdc;.
