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Central Semiconductor

2N6213 Datasheet Preview

2N6213 Datasheet

SILICON PNP POWER TRANSISTORS

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2N6211
2N6212
2N6213
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6211, 2N6212,
and 2N6213 are silicon PNP transistors designed
for high speed switching and high voltage amplifier
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N6211
275
225
2N6212
350
300
6.0
2.0
5.0
1.0
35
-65 to +200
5.0
2N6213
400
350
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6211
2N6212
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
ICEV
VCE=250V, VBE=1.5V
- 0.5
--
ICEV
VCE=315V, VBE=1.5V
--
- 0.5
ICEV
VCE=360V, VBE=1.5V
--
--
ICEV
VCE=250V, VBE=1.5V, TC=100°C
- 5.0
--
ICEV
VCE=315V, VBE=1.5V, TC=100°C
--
- 5.0
ICEV
VCE=360V, VBE=1.5V, TC=100°C
--
--
ICEO
VCE=150V
- 5.0
- 5.0
IEBO
VEB=6.0V
- 1.0
- 0.5
BVCEV
IC=50mA, VBE=1.5V, L=10mH
275 -
350 -
BVCER
IC=50mA, RBE=50Ω
250 -
325 -
BVCEO
IC=50mA
225 -
300 -
BVEBO
IE=1.0mA
6.0 -
--
BVEBO
IE=0.5mA
--
6.0 -
VCE(SAT) IC=1.0A, IB=125mA
- 1.4
- 1.6
VBE(SAT) IC=1.0A, IB=125mA
- 1.4
- 1.4
hFE VCE=2.8V, IC=1.0A
10 100
--
hFE VCE=3.2V, IC=1.0A
--
10 100
hFE VCE=4.0V, IC=1.0A
--
--
2N6213
MIN MAX
--
--
- 0.5
--
--
- 5.0
- 5.0
- 0.5
400 -
375 -
350 -
--
6.0 -
- 2.0
- 1.4
--
--
10 100
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
R3 (11-November 2015)




Central Semiconductor

2N6213 Datasheet Preview

2N6213 Datasheet

SILICON PNP POWER TRANSISTORS

No Preview Available !

2N6211
2N6212
2N6213
SILICON
PNP POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
fT
VCE=10V, IC=200mA, f=5.0MHz
20
Cob VCB=10V, IE=0, f=1.0MHz
220
tr VCC=200V, IC=1.0A, IB1=IB2=125mA
0.6
ts VCC=200V, IC=1.0A, IB1=IB2=100mA
2.5
tf VCC=200V, IC=1.0A, IB1=IB2=125mA
0.6
IS/b*
VCE=40V
875
*Pulsed: 1.0s non-repetitive pulse.
TO-66 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
μs
μs
μs
mA
w w w. c e n t r a l s e m i . c o m
MARKING:
FULL PART NUMBER
R3 (11-November 2015)


Part Number 2N6213
Description SILICON PNP POWER TRANSISTORS
Maker Central Semiconductor
Total Page 3 Pages
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