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2N6282 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications.

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Datasheet Details

Part number 2N6282
Manufacturer Central Semiconductor
File Size 257.22 KB
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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Other Datasheets by Central Semiconductor
  • 2N6283 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6284 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6285 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • 2N6286 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6282 2N6285 60 60 2N6283 2N6286 80 80 5.0 20 40 0.
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