Datasheet4U Logo Datasheet4U.com

2N6282 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlingtion Power Transistor.

General Description

·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6285 APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment.

ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IB Base Current 0.5 A PC Collector Power Dissipation@TC=25℃ 160 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.09 ℃/W 2N6282 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;

2N6282 Distributor