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2N6497 Datasheet SILICON NPN POWER TRANSISTORS

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.

MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6497 350 250 2N6498 400 300 6.0 5.0 10 2.0 80 -65 to +150 1.56 2N6499 450 350 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6497 2N6498 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEX VCE=Rated VCBO, VBE=1.5V - 1.0 - 1.0 ICEX VCE=½Rated VCBO, VBE=1.5V, TC=100°C - 10 - 10 IEBO VEB=6.0V - 1.0 - 1.0 BVCEO IC=25mA 250 - 300 - VCE(SAT) IC=2.5A, IB=500mA - 1.0 - 1.25 VCE(SAT) IC=5.0A, IB=2.0A - 5.0 - 5.0 VBE(SAT) IC=2.5A, IB=500mA - 1.5 - 1.5 VBE(SAT) IC=5.0A, IB=2.0A - 2.5 - 2.5 hFE VCE=10V, IC=2.5A 10 75 10 75 hFE VCE=10V, IC=5.0A 3.0 - 3.0 - fT VCE=10V, IC=250mA, f=1.0MHz 5.0 - 5.0 - Cob VCB=10V, IE=0, f=100kHz - 150 - 150 tr VCC=125V, IC=2.5A, IB1=0.5A - 1.0 - 1.0 ts VCC=125V, IC=2.5A, VBE=5.0V, IB1=IB2=0.5A - 2.5 - 2.5 tf VCC=125V, IC=2.5A, IB1=IB2=0.5A - 1.0 - 1.0 2N6499 MIN MAX - 1.0 - 10 - 1.0 350 - 1.5 - 5.0 - 1.5 - 2.5 10 75 3.0 5.0 - 150 - 1.0 - 2.5 - 1.0 UNITS V V V A A A W °C °C/W UNITS mA mA mA V V V V V MHz pF μs μs μs R1 (31-July 2013) 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER w w w.

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Overview

2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w.

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