2N6532 Overview
Description
The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD TJ,Tstg ΘJC 2N6530 80 80 80 80 2N6531 2N6532 100 100 100 100 100 100 100 100 5.0 8.0 15 65 2N6533 120 120 120 120 -65 to +150 1.92 UNITS V V V V V A A W °C °C/W 2N6530 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO VCE=Rated VCEO 1.0 1.0 1.0 ICEV VCE=Rated VCEV, 0.5 0.5 0.5 VEB=1.5V ICEV VCE=Rated VCEV, 5.0 5.0 5.0 VEB=5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0 5.0 BVCER IC=200mA, RBE=100Ω 80 100 100 BVCEO IC=200mA 80 100 100 BVCEV IC=200mA, VEB=1.5V 80 100 100 VCE(SAT) IC=3.0A, IB=6.0mA 3.0 VCE(SAT) IC=5.0A, IB=10mA 2.0 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 3.0 3.0 VBE(ON) VCE=3.0V, IC=3.0A 2.8 VBE(ON) VCE=3.0V, IC=5.0A 2.8 2.8 VBE(ON) VCE=3.0V, IC=8.0A 4.5 4.5 4.5 2N6533 MIN MAX 1.0 0.5 5.0 5.0 120 120 120 2.0 3.0 2.8 4.5 UNITS mA mA mA mA V V V V V V V V V (CONTINUED ON REVERSE SIDE) R0 2N6530 SERIES NPN POWER TRANSISTOR SYMBOL TEST CONDITIONS 2N6530 2N6531 2N6532 2N6533 MIN MAX MIN MAX MIN MAX MIN MAX hFE hFE hFE VF hfe |hfe| Cob IS/b ES/b VCE=3.0V, IC=3.0A VCE=3.0V, IC=5.0A 1K VCE=3.0V, IC=8.0A 100 IC=10A VCE=5.0V, IC=1.0A, f=1.0kHz 1K VCE=5.0V, IC=1.0A, f=1.0MHz 20 VCB=10V, IE=0, f=1.0MHz VCE=24V, t=0.5s nonrep.
