2N6533 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD TJ,Tstg ΘJC 2N6530 80 2N6531 2N6532 100 100 100 100 100 100 100 100 5.0 8.0 15 65 2N6533 120 -65 to +150 1.92 UNITS V V V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6530 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO VCE=Rated VCEO 1.0 1.0 1.0 ICEV VCE=Rated VCEV, 0.5 0.5 0.5 VEB=1.5V ICEV VCE=Rated VCEV, 5.0 5.0 5.0 VEB=5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0...