2N6533
2N6533 is Silicon Power Transistor manufactured by SavantIC.
DESCRIPTION
- With TO-220 package
- DARLINGTON
- High DC current gain APPLICATIONS
- Power switching
- Hammer drivers
- Series and shunt regulators
- Audio amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 15 0.25 65 150 -65~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL R9JC PARAMETER Thermal resistance junction to case VALUE 1.92 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
SYMBOL
UNIT
VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEV ICEO IEBO h FE-1 h FE-2 VF
Collector-emitter sustaining voltage
IC=0.2A ; IB=0 IC=3A ;IB=6m A IC=8A; IB=80m A IC=3A ; VCE=3V IC=8A ; VCE=3V VCE=120V; VBE=-1.5V TC=125 VCE=120V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=8A ; VCE=3V IF=5A
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Base -emitter on voltage
4.5 0.5 5.0 1.0
Collector cut-off current m A
Collector cut-off current m A
Emitter cut-off current
5.0 m...