BC107B
DESCRIPTION
: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC
BC107 50
BC108 BC109 30 30 25 25 5.0 5.0 200 600
-65 to +200 175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=45V (BC107)
ICBO
VCB=45V, TA=125°C (BC107)
ICBO
VCB=25V (BC108, BC109)
ICBO
VCB=25V, TA=125°C (BC108, BC109)
BVCEO
IC=2.0m A (BC107)
BVCEO
IC=2.0m A (BC108, BC109)
BVEBO
IE=10μA (BC107)
BVEBO
IE=10μA (BC108, BC109)
VCE(SAT) IC=10m A, IB=0.5m A
VCE(SAT) IC=100m A, IB=5.0m A
VBE(SAT) IC=10m A,...
