Datasheet Details
| Part number | BC108C |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.12 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | BC108C BC107B Datasheet (PDF) |
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Overview: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BC108C |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.12 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | BC108C BC107B Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°C (BC107) ICBO VCB=25V (BC108, BC109) ICBO VCB=25V, TA=125°C (BC108, BC109) BVCEO IC=2.0mA (BC107) 45 BVCEO IC=2.0mA (BC108, BC109) 25 BVEBO IE=10μA (BC107) 6.0 BVEBO IE=10μA (BC108, BC109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5.0V, IC=10μA (BC108C, BC109C) 100 hFE VCE=5.0V, IC=2.0mA (BC107) 110 hFE VCE=5.0V, IC=2.0mA (BC107A) 110 hFE VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 hFE VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420 TYP MAX 15 4.0 15 4.0 0.25 0.6 0.7 0.83 1.0 1.05 0.7 0.77 450 220 450 800 UNITS V V V mA mW °C °C/W UNITS nA μA nA μA V V V V V V V V V V R1 (16-August 2012) BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107) 125 500 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107A) 125 260 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC108C | GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR | TT |
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BC108C | NPN Transistor | CDIL |
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BC108C | Low Power Bipolar Transistors | Multicomp |
 |
BC108 | GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR | Seme LAB |
 |
BC108 | NPN general purpose transistors | Philipss |
| Part Number | Description |
|---|---|
| BC108 | (BC107x - BC109x) Small Signal Transistors |
| BC108A | (BC107x - BC109x) Small Signal Transistors |
| BC108B | NPN SILICON TRANSISTOR |
| BC107 | NPN SILICON TRANSISTOR |
| BC107A | NPN SILICON TRANSISTOR |
| BC107B | NPN SILICON TRANSISTOR |
| BC109 | (BC107x - BC109x) Small Signal Transistors |
| BC109B | NPN SILICON TRANSISTOR |
| BC109C | NPN SILICON TRANSISTOR |
| BC140 | SILICON NPN TRANSISTORS |