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CDM22010-650 Datasheet - Central Semiconductor

SILICON N-CHANNEL POWER MOSFET

CDM22010-650 Features

* High voltage capability (VDS=650V)

* Low gate charge (Qgs=8.0nC)

* Low rDS(ON) (0.88Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10

CDM22010-650 General Description

The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage .

CDM22010-650 Datasheet (846.36 KB)

Preview of CDM22010-650 PDF

Datasheet Details

Part number:

CDM22010-650

Manufacturer:

Central Semiconductor ↗

File Size:

846.36 KB

Description:

Silicon n-channel power mosfet.

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CDM22010-650 SILICON N-CHANNEL POWER MOSFET Central Semiconductor

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