CDM4-650
CDM4-650 is SILICON N-CHANNEL MEDIUM POWER MOSFET manufactured by Central Semiconductor.
DESCRIPTION
: The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET bines high voltage capability with low r DS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING: FULL PART NUMBER
FEATURES
:
- High voltage capability (VDS=650V)
- Low gate charge (Qgs=3.0n C)
- Low r DS(ON) (2.44Ω)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10µs
Continuous Source Current (Body Diode)
Maximum Pulsed Source Current (Body Diode)
Single Pulse Avalanche Energy (Note 1)
202 m J
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
-55 to +150
°C
Thermal Resistance
ΘJC
°C/W
Thermal Resistance
ΘJA
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise...
