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CDM4-650 - SILICON N-CHANNEL MEDIUM POWER MOSFET

General Description

The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters.

Key Features

  • High voltage capability (VDS=650V).
  • Low gate charge (Qgs=3.0nC).
  • Low rDS(ON) (2.44Ω).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT DPAK CASE APPLICATIONS: • Power Factor Correction • Alternative energy inverters • Solid state lighting w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING: FULL PART NUMBER FEATURES: • High voltage capability (VDS=650V) • Low gate charge (Qgs=3.0nC) • Low rDS(ON) (2.