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CDM22010-650 - SILICON N-CHANNEL POWER MOSFET

General Description

The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters.

Key Features

  • High voltage capability (VDS=650V).
  • Low gate charge (Qgs=8.0nC).
  • Low rDS(ON) (0.88Ω).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CDM22010-650 SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. TO-220 CASE MARKING CODE: CDM10-650 APPLICATIONS: • Power Factor Correction • Motor drives • Alternative energy inverters • Solid state lighting FEATURES: • High voltage capability (VDS=650V) • Low gate charge (Qgs=8.0nC) • Low rDS(ON) (0.