CDM22010-650
CDM22010-650 is SILICON N-CHANNEL POWER MOSFET manufactured by Central Semiconductor.
DESCRIPTION
: The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET bines high voltage capability with low r DS(ON), low threshold voltage and low gate charge.
TO-220 CASE
MARKING CODE: CDM10-650
APPLICATIONS:
- Power Factor Correction
- Motor drives
- Alternative energy inverters
- Solid state lighting
FEATURES
:
- High voltage capability (VDS=650V)
- Low gate charge (Qgs=8.0n C)
- Low r DS(ON) (0.88Ω)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10µs
Continuous Source Current (Body Diode)
Maximum Pulsed Source Current (Body Diode)
Single Pulse Avalanche Energy (Note 1)
608 m J
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
-55 to +150
°C
Thermal...
