CDMSJ22029-650
DESCRIPTION
: The CENTRAL SEMICONDUCTOR CDMSJ22029-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET bines high voltage capability with low r DS(ON), low threshold voltage and low gate charge. MARKING: CDMSJ
29-650
FEATURES
:
- High voltage capability (VDS=650V)
- Low gate charge (Qgs=11n C)
- Low r DS(ON) (0.13Ω)
MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current
Diode Forward Current Power Dissipation Power Dissipation (TC=100°C) Operating and Storage Junction Temperature
SYMBOL UNITS
TJ, Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
UNITS
BVDSS VGS(th) RDS(on) IDSS IGSS IGSSR gfs
Qg...
