Datasheet Details
| Part number | CMLM3405 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 505.87 KB |
| Description | NPN TRANSISTOR AND SCHOTTKY DIODE |
| Datasheet | CMLM3405-CentralSemiconductor.pdf |
|
|
Overview: CMLM3405 MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON HIGH CURRENT LOW VCE(SAT) NPN TRANSISTOR AND LOW VF SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i .
| Part number | CMLM3405 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 505.87 KB |
| Description | NPN TRANSISTOR AND SCHOTTKY DIODE |
| Datasheet | CMLM3405-CentralSemiconductor.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR CMLM3405 is a single NPN transistor and Schottky diode packaged in a space saving SOT-563 case and designed for small signal general purpose applications where size and operational efficiency are prime requirements.
• Complementary Device: CMLM7405 • Combination High Current Low VCE(SAT) Transistor and Low VF Schottky Diode.
MARKING CODE: C53 MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL PD TJ, Tstg ΘJA 350 -65 to +150 357 UNITS mW °C °C/W MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 25 Emitter-Base Voltage VEBO 6.0 Continuous Collector Current IC 1.0 Peak Collector Current ICM 1.5 UNITS V V V A A MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRM 40 Continuous Forward Current IF 500 Peak Repetitive Forward Current, tp ≤1.0ms IFRM 3.5 Peak Forward Surge Current, tp = 8.0ms IFSM 10 UNITS V mA A A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA 40 BVCEO IC=10mA 25 BVEBO IE=100μA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 VCE(SAT) IC=100mA, IB=10mA 35 VCE(SAT) IC=200mA, IB=20mA 75 VCE(SAT) IC=500mA, IB=50mA 130 VCE(SAT) IC=800mA, IB=80mA 200 VCE(SAT) IC=1.0A, IB=100mA 250 VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA MAX 100 100 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V R3 (1-July 2015) CMLM3405 MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON HIGH CURRENT LOW VCE(SAT) NPN TRANSISTOR AND LOW VF SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V,
| Part Number | Description |
|---|---|
| CMLM0205 | Multi Discrete Module |
| CMLM0305 | Multi Discrete Module |
| CMLM0305G | Multi Discrete Module |
| CMLM2205 | SILICON NPN SWITCHING TRANSISTOR AND SCHOTTKY DIODE |
| CMLD2004 | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |
| CMLD2004A | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |
| CMLD2004C | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |
| CMLD2004DO | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |
| CMLD2004G | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |
| CMLD2004S | SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES |