Datasheet Details
| Part number | CMPT5551HC |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 150.62 KB |
| Description | SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR |
| Download | CMPT5551HC Download (PDF) |
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| Part number | CMPT5551HC |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 150.62 KB |
| Description | SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR |
| Download | CMPT5551HC Download (PDF) |
|
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: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.
MARKING CODE: 1FHC SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 180 160 6.0 80 80 30 100 10 MAX 50 50 50 0.15 0.20 1.00 1.00 250 15 UNITS V V V A mW °C °C/W UNITS nA µA nA V V V V V V V MHz pF R1 (1-February 2010) CMPT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1FHC w w w.
c e n t r a l s e m i .
CMPT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR w w w.
c e n t r a l s e m i .
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