Part CMST5089
Description SURFACE MOUNT NPN SILICON TRANSISTOR
Category Transistor
Manufacturer Central Semiconductor
Size 444.84 KB
Central Semiconductor

CMST5089 Overview

Description

The CENTRAL SEMICONDUCTOR CMST5088, CMST5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMST5088: 1QC CMST5089: 1RC SYMBOL CMST5088 CMST5089 Collector-Base Voltage VCBO 35 30 Collector-Emitter Voltage VCEO 30 25 Emitter-Base Voltage VEBO 4.5 Continuous Collector Current IC 50 Power Dissipation PD 275 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 ΘJA 455 CMST5089 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO ICBO IEBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF VCB=20V - 50 VCB=15V - - VEB=3.0V - 50 VEB=4.5V - - IC=100µA 35 - IC=1.0mA 30 - IE=100µA 4.5 - IC=10mA, IB=1.0mA - 0.5 IC=10mA, IB=1.0mA - 0.8 VCE=5.0V, IC=0.1mA 300 900 VCE=5.0V, IC=1.0mA 350 - VCE=5.0V, IC=10mA 300 - VCE=5.0V, IC=500µA, f=20MHz 50 - VCB=5.0V, IE=0, f=1.0MHz - 4.0 VBE=0.5V, IC=0, f=1.0MHz - 15 VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1400 VCE=5.0V, IC=100µA, RS=10kΩ f=10Hz to 15.7kHz - 3.0 - - - 50 - - - 100 30 - 25 - 4.5 - - 0.5 - 0.8 400 1200 450 - 400 - 50 - - 4.0 - 15 450 1800 - 2.0 UNITS V V V mA mW °C °C/W UNITS nA nA nA nA V V V V V MHz pF pF dB R6 (03-January 2024) CMST5088 CMST5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE.