CPQ165 Datasheet - Central Semiconductor

CPQ165 Triac

PROCESS www.DataSheet4U.com CPQ165 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Series CQ220-25MFP Series Glass Passivated Mesa 165 x 165 MILS 8.6 MILS ± 0.6 MILS 134 x 83 MILS 35 x 35 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-11.

CPQ165_CentralSemiconductor.pdf