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Central
www.DataSheet4U.com
TM
PROCESS
CPQ110
Triac
Semiconductor Corp.
8.0 Amp, 600 Volt Triac Chip
PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS ± 0.6 MILS 80 MILS x 35 MILS 37 MILS x 37 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CQ220-8B Series CQDD-8M Series
BACKSIDE MT2
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CPQ110 Datasheet
