Datasheet Details
| Part number | CXT591E |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 321.22 KB |
| Description | SURFACE MOUNT PNP SILICON TRANSISTOR |
| Datasheet | CXT591E-CentralSemiconductor.pdf |
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Overview: CXT591E SURFACE MOUNT SILICON PNP TRANSISTOR w w w. c e n t r a l s e m i .
| Part number | CXT591E |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 321.22 KB |
| Description | SURFACE MOUNT PNP SILICON TRANSISTOR |
| Datasheet | CXT591E-CentralSemiconductor.pdf |
|
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: The CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications.
MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO 80 V VCEO 60 V VEBO 5.0 V IC 1.0 A IB 200 mA ICM 2.0 A PD 1.2 W TJ, Tstg -65 to +150 °C ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob VCB=60V 100 VEB=4.0V 100 IC=100µA 80 IC=10mA 60 IE=100µA 5.0 IC=500mA, IB=50mA 0.20 IC=1.0A, IB=100mA 0.40 IC=1.0A, IB=100mA 1.1 VCE=5.0V, IC=1.0A 1.0 VCE=5.0V, IC=1.0mA 200 VCE=5.0V, IC=500mA 200 600 VCE=5.0V, IC=1.0A 50 VCE=5.0V, IC=2.0A 15 VCE=10V, IC=50mA, f=100MHz 150 VCB=10V, IE=0, f=1.0MHz 14 20 UNITS nA nA V V V V V V V MHz pF R3 (28-February 2024) CXT591E SURFACE MOUNT SILICON PNP TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER (Bottom View) w w w.
c e n t r a l s e m i .
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