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CMT05N50 Datasheet Preview

CMT05N50 Datasheet

Power MOSFET

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GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
CMT05N50
POWER MOSFET
FEATURES
‹ Higher Current Rating
‹ Lower rDS(ON), Lower Capacitances
‹ Lower Total Gate Charge
‹ Tighter VSD Specifications
‹ Avalanche Energy Specified
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT05N50N220
CMT05N50N220FP
Package
TO-220
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed (Note 1)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derate above 25
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
EAS
TJ, TSTG
θJC
θJA
TL
Value
5.0
18
±20
96
0.77
125
-55 to 150
1.70
62
300
Unit
A
V
W
W/
mJ
/W
2006/10/11 Rev. 1.1
Champion Microelectronic Corporation
Page 1




Champion

CMT05N50 Datasheet Preview

CMT05N50 Datasheet

Power MOSFET

No Preview Available !

CMT05N50
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 500V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4)
Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 250 V, ID = 5 A,
RG = 9.1, VGS = 10 V) (Note 4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400V, ID = 5A
VGS = 10 V) (Note 4)
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
IF = 5A, di/dt = 100A/μs , TJ = 25
Reverse Recovery Time
Diode Forward Voltage
IS = 5A, VGS = 0 V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25
(3) ISD 4.5A, di/dt 75A/μs, VDD V(BR)DSS, TJ 150
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT05N50
Min
Typ
Max
500
25
100
-100
2.0
4.0
1.5
2.8
520
730
170
240
11
20
7.0
10
9.0
20
20
40
10
20
10
2
3
4.5
7.5
Units
V
μA
nA
nA
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Qrr
1.8
μC
ton
**
trr
415
ns
VSD
1.5
V
2006/10/11 Rev. 1.1
Champion Microelectronic Corporation
Page 2



Part Number CMT05N50
Description Power MOSFET
Maker Champion
Total Page 3 Pages
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