900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Champion

CMT06N60 Datasheet Preview

CMT06N60 Datasheet

Power MOSFET

No Preview Available !

CMT06N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ‹
scheme to provide enhanced voltage-blocking capability
‹
without degrading performance over time. In addition, this ‹
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
‹
efficient design also offers a drain-to-source diode with a ‹
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 1




Champion

CMT06N60 Datasheet Preview

CMT06N60 Datasheet

Power MOSFET

No Preview Available !

CMT06N60
POWER FIELD EFFECT TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Value
6.0
18
±20
±40
125
45
-55 to 150
180
1.0
62.5
260
Unit
A
V
V
W
mJ
/W
ORDERING INFORMATION
Part Number
CMT06N60N220
CMT06N60N220FP
Package
TO-220
TO-220FP
TEST CIRCUIT
Test Circuit – Avalanche Capability
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 2



Part Number CMT06N60
Description Power MOSFET
Maker Champion
Total Page 3 Pages
PDF Download

CMT06N60 Datasheet PDF





Similar Datasheet

1 CMT06N60 Power MOSFET
Champion





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy