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CMT2N7000 Datasheet Preview

CMT2N7000 Datasheet

SMALL SIGNAL MOSFET

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CMT2N7000
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is !
produced using high cell density, DMOS technology. These !
products have been designed to minimize on-state
!
resistance while provide rugged, reliable, and fast switching !
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
PIN CONFIGURATION
TO-92
Top View
SYMBOL
D
G
123
ORDERING INFORMATION
Part Number
CMT2N7000
Package
TO-92
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (RGS = 1.0M)
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
Derate above 25
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
VDSS
VDGR
ID
IDM
VGS
VGSM
PD
TJ, TSTG
θJA
TL
Value
60
60
200
500
±20
±40
350
2.8
-55 to 150
357
300
Unit
V
V
mA
V
V
mW
mW/
/W
2002/10/07 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1




Champion

CMT2N7000 Datasheet Preview

CMT2N7000 Datasheet

SMALL SIGNAL MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 10 μA)
Drain-Source Leakage Current
(VDS = 48 V, VGS = 0 V)
(VDS = 48 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward
(Vgsf = 15 V, VDS = 0 V)
Gate Threshold Voltage *
(VDS = VGS, ID = 1.0 mA)
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
On-State Drain Current *
(VGS = 5 V, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Turn-Off Delay Time
(VDD = 15 V, ID = 500 mA,
Vgen = 10 V, RG = 25, RL = 30) *
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
CMT2N7000
SMALL SIGNAL MOSFET
Symbol
V(BR)DSS
IDSS
IGSSF
VGS(th)
RDS(on)
VDS(on)
Id(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
CMT2N7000
Min
Typ
Max
60
Units
V
1.0
μA
1.0
mA
-10
nA
0.8
3.0
V
5.0
V
2.5
60
mA
100
mmhos
60
pF
25
pF
5.0
pF
10
ns
10
ns
2002/10/07 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2



Part Number CMT2N7000
Description SMALL SIGNAL MOSFET
Maker Champion
Total Page 3 Pages
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CMT2N7000 Datasheet PDF





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