CMT2N7002E Overview
Key Features
- This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology
- These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance
- Low On-Resistance: 3Ω Low Threshold: 2V (typ.) Low Input Capacitance: 25pF Fast Switching Speed: 7.5ns Low Input and Output Leakage
