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CMT2N7000
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is !
produced using high cell density, DMOS technology. These !
products have been designed to minimize on-state
!
resistance while provide rugged, reliable, and fast switching !
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
CMT2N7000 Datasheet
