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CMT2N7002K Datasheet Preview

CMT2N7002K Datasheet

SMALL SIGNAL MOSFET

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CMT2N7002K
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching and ESD
enhanced performance. It can be used in most applications
requiring up to 115mA DC and can deliver pulsed currents up
to 800mA. This product is particularly suited for low voltage, low
current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
‹ High Density Cell Design for Low RDS(ON)
‹ Voltage Controlled Small Signal Switch
‹ Rugged and Reliable
‹ High Saturation Current Capability
‹ ESD Protected 2KV HBM
PIN CONFIGURATION
SYMBOL
SOT-23
TOP View
3
1
2
ORDERING INFORMATION
Part Number
CMT2N7002K
CMT2N7002KX*
*Note: X : Suffix for Halogen Free Product
Package
SOT-23
SOT-23
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (RGS = 1.0M)
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
Derate above 25
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
VDSS
VDGR
ID
IDM
VGS
VGSM
PD
TJ, TSTG
θJA
TL
Value
60
60
115
800
±15
±15
225
1.8
-55 to 150
417
300
Unit
V
V
mA
V
V
mW
mW/
/W
2010/03/23 Rev. 1.2
Champion Microelectronic Corporation
Page 1




Champion

CMT2N7002K Datasheet Preview

CMT2N7002K Datasheet

SMALL SIGNAL MOSFET

No Preview Available !

CMT2N7002K
SMALL SIGNAL MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Symbol
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 10 μA)
Drain-Source Leakage Current
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward (Vgsf = 15 V)
Gate-Source Leakage Current-Reverse (Vgsf = -15 V)
Gate Threshold Voltage *
(VDS = VGS, ID = 250 μA)
On-State Drain Current (VDS 2.0 VDS(on), VGS = 10V)
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
(VGS = 10 V, ID = 0.5A, TJ = 125)
(VGS = 5.0 V, ID = 50mA)
(VGS = 5.0 V, ID = 50mA, TJ = 125)
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
(VGS = 5.0 V, ID = 50mA)
Forward Transconductance (VDS 2.0 VDS(on), ID = 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Turn-Off Delay Time
(VDD = 25 V, ID = 500 mA,
Vgen = 10 V, RG = 25, RL = 50) *
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
V(BR)DSS
IDSS
IGSSF
IGSSF
VGS(th)
Id(on)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
IS
ISM
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
CMT2N7002K
Min
Typ
Max
60
Units
V
1.0
μA
0.5
mA
1.0
μA
-1.0
μA
1.0
2.5
V
500
mA
7.5
13.5
7.5
13.5
V
3.75
0.375
80
mmhos
50
pF
25
pF
5.0
pF
20
ns
40
ns
-1.5
V
-115
mA
-800
mA
2010/03/23 Rev. 1.2
Champion Microelectronic Corporation
Page 2



Part Number CMT2N7002K
Description SMALL SIGNAL MOSFET
Maker Champion
Total Page 3 Pages
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CMT2N7002K Datasheet PDF





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