CMT9435G
Overview
VDS=-30V , ID=-5.3A RDS(ON) , VGS@-10V , IDS@ -5.3A = 60mΩ RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ.
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot -Through FOM SYMBOL P-Channel MOSFET
