Download the CEU630N datasheet PDF.
This datasheet also covers the CEU630N_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Note: The manufacturer provides a single datasheet file (CEU630N_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.
N-Channel Enhancement Mode Field Effect Transistor.
Key Features
200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S.
CEU630N Datasheet
