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MX6018 - N-Channel Power MOSFET

General Description

The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • Schematic diagram.
  • VDS =60V，ID =18A.
  • RDS(ON)(Typ. )10mΩ @ Vgs=10V.
  • RDS(ON)(Typ. )13.5mΩ @ Vgs=4.5V High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Special process technology for high ESD capability k Good stability and uniformity with high EAS Excellent package for good heat dissipation e.

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Datasheet Details

Part number MX6018
Manufacturer ChipSourceTek
File Size 1.87 MB
Description N-Channel Power MOSFET
Datasheet download datasheet MX6018 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. MX6018 s G General Features Schematic diagram  VDS =60V，ID =18A  RDS(ON)(Typ.)10mΩ @ Vgs=10V  RDS(ON)(Typ.)13.5mΩ @ Vgs=4.