PN10HN60-CBI-T1, PN10HN60 Datasheet (Chipown) - N-Channel Superjunction MOSFET

PN10HN60-CBI-T1 - N-Channel Superjunction MOSFET

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the

PN10HN60-CBI-T1 Features

* RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A

* Extremely high dv/dt capablity

* Very high commutation ruggedness

* Extremely low losses due to very low Rdson

* Qg

* Ultra low gate charge ( Typ. Qg = 25nC)

* Low effective output capacitance

* 100% avalanche tested