PN10HN60-CBI-T1 Datasheet, Chipown

PN10HN60-CBI-T1 mosfet equivalent, n-channel superjunction mosfet.

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Features and benefits

* RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low R.

Application

Features
* RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commut.

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PN100

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