PN10HN60-CAI-T1 Datasheet N-channel Superjunction MOSFET

Manufacturer: Chipown

Overview: PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET®.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PN10HN60-CAI-T1
Manufacturer	Chipown
File Size	374.50 KB
Description	N-Channel Superjunction MOSFET
Datasheet	PN10HN60-CAI-T1 PN10HN60 Datasheet (PDF)

General Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance pared to that of a conventional MOSFET.

By bining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness.

Key Features

RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A.
Extremely high dv/dt capablity.
Very high commutation ruggedness.
Extremely low losses due to very low Rdson.
Qg.
Ultra low gate charge ( Typ. Qg = 25nC).
Low effective output capacitance.
100% avalanche tested.
JEDEC qualified, Pb-free plating.

More Datasheets from Chipown

Part Number	Description
PN10HN60-CBI-T1	N-Channel Superjunction MOSFET
PN10HN60	N-Channel Superjunction MOSFET

Datasheet Details

General Description

Key Features

More Datasheets from Chipown

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