PN10HN60 Key Features
- RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
- Extremely high dv/dt capablity
- Very high mutation ruggedness
- Extremely low losses due to very low Rdson-Qg
- Ultra low gate charge ( Typ. Qg = 25nC)
- Low effective output capacitance
- 100% avalanche tested
- JEDEC qualified, Pb-free plating