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CMN2308 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The CMN2308 is the N-Channel enhancement mode power field effect transistors using advanced trench technology to provide excellent RDS(ON).

Key Features

  • RDS(ON).

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Datasheet Details

Part number CMN2308
Manufacturer Cmos
File Size 873.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CMN2308 Datasheet

Full PDF Text Transcription for CMN2308 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMN2308. For precise diagrams, and layout, please refer to the original PDF.

CMN2308 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN2308 is the N-Channel enhancement mode power field effect transistors using advanced...

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Channel enhancement mode power field effect transistors using advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application , such as high side power loss of mobile phone and notebook computer power management and other battery power supply circuit of the switch and the low line, need to be in a very small outline surface mount package. Features RDS(ON)<105mΩ @ VGS=10V RDS(ON)<125mΩ @ VGS=4.

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