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2SC2216 Datasheet Preview

2SC2216 Datasheet

NPN Silicon Plastic-Encapsulate Transistor

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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
Capable of 300mWatts of Power Dissipation.
Collector-current 50mA
Collector-base Voltage 50V
Operating and storage junction temperature range: -55OC to +150OC
Pin Configuration
Bottom View
EB C
2SC2216
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V (BR)CEO
Collector-Emitter Breakdown Voltage
(I C=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
ICBO Collector Cutoff Current
(V CB=50Vdc, IE=0)
IEBO Emitter Cutoff Current
(V EB=4.0Vdc, IC=0)
ON CHARACTERISTICS
45 --- Vdc
50 --- Vdc
4.0 --- Adc
--- 0.1 uAdc
--- 0.1 uAdc
h FE
V CE(sat)
V(BE)sat
fT
DC Current Gain
(I C=12.5mAdc, VCE=12.5Vdc)
Collector-Emitter Saturation Voltage
(I C=15mAdc, IB=1.5mAdc)
Base-Emitter Saturation Voltage
(I C=15mAdc, IB=1.5mAdc)
Transition Frequency
(V CE=12.5Vdc, IC=12.5mAdc,
f=100MHz)
40 140 ---
--- 0.2 Vdc
--- 1.5 Vdc
300 --- MHz
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .170 .190
B .170 .190
C .550 .590
D .010 .020
E .130 .160
G .010 .104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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Part Number 2SC2216
Description NPN Silicon Plastic-Encapsulate Transistor
Maker Cnelectr
Total Page 1 Pages
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