LGE 2SC2216
NPN Transistor
| Part No. | 2SC2216 |
|---|---|
| Datasheet | 2SC2216 Download |
| Manufacturer |  LGE |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Amplifier dissipation NPN SiliconMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature 50 45 4 50 300 125 -55-125 V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency Collector output capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob IC= 100μA, IE=0 IC= 10 mA , IB=0 IE= 100μA, IC=0 VCB=50 V IE=0 VEB= 3 V, IC=0 VCE=12.5V, IC=12.5 mA IC= 15mA, IB=1.5 mA IC= 15mA, IB=1.5 m...