FEATURES
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● Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (V CB=50Vdc, IE =0) Emitter Cutoff Current (V EB =4.0Vdc, IC=0) DC Current Gain (I C=12.5mAdc, V CE=12.5Vdc) Collector-Emitter Saturation Voltage (I C=15mAdc, IB =1.5mAdc) Base-Emitter Saturation Voltage (I C=15mAdc, IB =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f=100MHz) Min 45 50 4.0 ----Max ------0.1 0.1 Units Vdc Vdc Adc uAdc uAdc D B OFF CHARACTERISTICS V (BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO C ON CHARACTERISTICS h FE V CE(sat) V(BE)sat fT 40 ---...