2SC2216 - NPN Transistor

Key Features

Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Br.

2SC2216 npn transistor by Cnelectr - Datasheet Preview

Datasheet Details

Part number	2SC2216
Manufacturer	Cnelectr
File Size	319.55 KB
Description	NPN Transistor
Datasheet	2SC2216 Datasheet

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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (V CB=50Vdc, IE =0) Emitter Cutoff Current (V EB =4.0Vdc, IC=0) DC Current Gain (I C=12.5mAdc, V CE=12.