Toshiba 2SC2216
Silicon NPN Transistor
| Part No. | 2SC2216 |
|---|---|
| Datasheet | 2SC2216 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High gain: Gpe = 33dB (typ.) (f = 45 MHz)
● Good linearity of hFE.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics 2SC2216 Collector-base voltage 2SC2717 Collector-emitter voltage 2SC2216 2SC2717 Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 50 30 45 25 4 50 -50 300 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Characteristics 2SC2216 Collector cut-off current 2SC2717 Emitter cut-off current Collector-emitter breakdown voltage 2SC2216 2SC2717 DC current gain 2SC2216 2SC2717 Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Collector-base time constant Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR...
