2N7002-G Datasheet MOSFET

Manufacturer: Comchip

Datasheet Details

MOSFET 2N7002-G (N-Channel) RoHS Device.

Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min.

Part Number	Description	Manufacturer
2N7002-G	N-Channel Enhancement-Mode Vertical DMOS FETs	Supertex
2N7002-01	N-channel FET	Diodes Incorporated
2N7002	N-Channel 60V MOSFET	Vishay
2N7002	N-channel FET	Fairchild Semiconductor
2N7002	N-Channel Power Mosfet	GME

Part Number	Description
2N7002-HF	MOSFET
2N7002K-HF	MOSFET