• Part: 2N7002
  • Description: N-Channel Power Mosfet
  • Manufacturer: Galaxy Microelectronics
  • Size: 297.36 KB
Download 2N7002 Datasheet PDF
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2N7002 Datasheet Text

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 Features - High Density Cell Design For Low Pb RDS(ON). Lead-free - Voltage Controlled Small Signal Switch. - Rugged and Reliable. - High Saturation Current Capability. - MSL 1 APPLICATIONS - N-channel enhancement mode effect transistor. - Switching application. SOT-23 ORDERING INFORMATION Type No. Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 Drain-Gate voltage(RGS≤1MΩ)...