2N7002 - N-Channel Power Mosfet

Galaxy Microelectronics

Key Features

High Density Cell Design For Low Pb RDS(ON). Lead-free.
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
MSL 1.

2N7002 n-channel power mosfet by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2N7002
Manufacturer	Galaxy Microelectronics
File Size	297.36 KB
Description	N-Channel Power Mosfet
Datasheet	2N7002 Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number	Description
2N7002H	N-Channel Enhancement Mode MOSFET
2N7002T	Small Signal MOSFET Transistor
2N7002W	N-Channel Power Mosfet
2N7002W	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-free  Voltage Controlled Small Signal Switch.  Rugged and Reliable.  High Saturation Current Capability.  MSL 1 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No.