2N7002E Datasheet | NXP Semiconductors

N-channel TrenchMOS™ FET Rev. 02 - 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold patible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3 Applications s Logic level translator s High speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 Simplified outline Symbol SOT23 mbb076 Philips Semiconductors N-channel...