Click to expand full text
2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology
1.3 Applications
s Logic level translator s High speed line driver
1.4 Quick reference data
s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
D
Simplified outline
Symbol
G
SOT23
mbb076
S
Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
3.
2N7002E Datasheet
