NXP Semiconductors 2N7002E
N-channel TrenchMOS FET
FEATURES
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3APPLICATIONS
s Logic level translator s High speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W 2. Pinning information Table 1: Pin 1 2 3 PinningDESCRIPTION
gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 3. Ordering information Table 2: Ordering information Package Name 2N7002E TO-236ABDESCRIPTION
plastic surface mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperatur...