| Part Number | 2N7002E Datasheet |
|---|---|
| Manufacturer | Diodes Incorporated |
| Overview |
and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applicati.
and Benefits
* Low On-Resistance * Low Gate Threshold Voltage * Low Input Capacitance * Fast Switching Speed * Small Surface-Mount Package * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * This part is qualified to JEDEC standards (as ref. |
2N7002E Datasheet and Specifications PDF
The 2N7002E is a N-channel MOSFET.
| Part Number | 2N7002E Datasheet |
|---|---|
| Description | N-Channel Enhancement MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type N-Channel Enhancement MOSFET 2N7002E MOSFET Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Absolute Maxi. Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤1.0MΩ Gate-Source Voltage -Continuous -Pulsed Continuous Drain Current Power Dissipation The. |
| Part Number | 2N7002E Datasheet |
|---|---|
| Description | Small Signal MOSFET |
| Manufacturer | onsemi |
| Overview |
Small Signal MOSFET
60 V, 310 mA, Single, N−Channel, SOT−23
2N7002E
Features
• Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications.
* Low RDS(on) * Small Footprint Surface Mount Package * Trench Technology * S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC *Q101 Qualified and PPAP Capable * These Devices are Pb *Free, Halogen Free/BFR Free and are RoHS Compliant Applications. |
| Part Number | 2N7002E Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | LITEON |
| Overview | N-Channel 60V MOSFET Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV) Application Portable appliances 2N7002E BVDSS. Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV) Application Portable appliances 2N7002E BVDSS=60V , RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.5V ID=0.43A Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted) Parameter Symbol. |