2N7002E
Key Features
- Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV)
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N7002E | Diodes Incorporated | N-channel MOSFET |
| 2N7002E | NXP Semiconductors | N-channel TrenchMOS FET |
| 2N7002E | Kexin Semiconductor | N-Channel Enhancement MOSFET |
| 2N7002E | Taitron Components | MOSFET |
| 2N7002E-T1-GE3 | VBsemi | N-Channel 60V MOSFET |
| 2N7002B | Kodenshi AUK Group | N-channel MOSFET |
| 2N7002-01 | Diodes Incorporated | N-channel FET |
| 2N7002DW | Diodes Incorporated | DUAL N-CHANNEL MOSFET |
| 2N7002LT1G | DCY | Small Signal MOSFET |
| 2N7002V | Fairchild Semiconductor | MOSFET |