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N-Channel 60V MOSFET
Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV)
Application Portable appliances
2N7002E
BVDSS=60V , RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.5V ID=0.43A
Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted)
Parameter
Symbol Marking
2N7002E E72
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
ID(1) 0.43
Pulsed Drain Current(1)
Power Dissipation
Ta=25℃ Ta=100℃
Operating Junction and Storage Temperature Range
IDM(2) PD TJ, Tstg
1.7 0.83 0.33 -55 to150
Diode Forward Current
IS(1) 0.4
Thermal Characteristics
Symbol
Symbol
Typ.
2N7002E Datasheet
