2N7002E
2N7002E is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Absolute Maximum Ratings Ta=25
Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤1.0MΩ Gate-Source Voltage -Continuous
-Pulsed Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range
Electrical Characteristics Ta = 25 ℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25
@ TC = 125 Gate-Body Leakage Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time
Turn-Off Delay Time
Marking
Marking
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
Unit: mm
+0.1 1.3 -0.1
+0.1 2.4 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
0.1 +0.05 -0.01
+0.1 0.97 -0.1
Symbol VDS VDGR
ID PD Rth JA TJ Tstg
Rating 60 60 ±20 ±40 240 300 417 150
-55 to 150
Unit
V m A m W ℃/W ℃
0-0.1 +0.1 0.38
-0.1
1.1Ba Gs Ae TE 2.2Em Si Ot Ut Re Cr E
3...
