Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Absolute Maximum Ratings Ta=25
Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤1.0MΩ Gate-Source Voltage -Continuous
-Pulsed Continuous Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range
Electrical Characteristics Ta = 25 ℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain C.
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SMD Type N-Channel Enhancement MOSFET 2N7002E
MOSFET
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Absolute Maximum Ratings Ta=25
Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤1.0MΩ Gate-Source Voltage -Continuous
-Pulsed Continuous Drain Current Power Dissipation Thermal Resistance.
2N7002E Datasheet
