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2N7002E Datasheet MOSFET

Manufacturer: TAITRON

Overview: Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET.

Datasheet Details

Part number 2N7002E
Manufacturer TAITRON
File Size 360.24 KB
Description MOSFET
Datasheet 2N7002E-TAITRON.pdf

General Description

Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed PD Total Power Dissipation TJ TSTG RθJA Junction Temperature Storage Temperature Junction to Ambient 2N7002Z 60 60 ±20 ±40 300 800 200 1.6 150 -55 ~ +150 625 Unit V V V V mA mA mW mW/°C °C °C °C/W TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (8

Key Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
  • RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings @ TA=25°C unless noted otherwise Symbol VDSS VDGR VGSS ID IDP.

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