2N7002E
2N7002E is MOSFET manufactured by Taitron Components.
Enhancement Mode MOSFET (N-Channel)
Enhancement Mode MOSFET (N-Channel)
Features
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- RoHS pliance, Halogen Free
SOT-23
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
Maximum Ratings @ TA=25°C unless noted otherwise
Symbol
VDSS VDGR
VGSS
ID IDP
Description
Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed
PD Total Power Dissipation
TJ TSTG...