2N7002E Overview
Description
Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed PD Total Power Dissipation TJ TSTG RθJA Junction Temperature Storage Temperature Junction to Ambient 2N7002Z 60 60 ±20 ±40 300 800 200 1.6 150 -55 ~ +150 625 Unit V V V V mA mA mW mW/°C °C °C °C/W TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (8.
Key Features
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
