2N7002KDWS Overview
Description
2N7002KDWS VDSS VGSS ID IDP PD TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source ESD Rating TA=25°C TA=75°C 60 ±20 115 800 200 120 +150 -55 to +150 2000 Unit V V mA mA mW mW °C °C V TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/CW Page 1 of 8 Enhancement Mode MOSFET (Double N-Channel) Off Characteristics 2N7002KDWS Symbol V(BR)DSS IDSS IGSS Description Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Characteristics (Note3) Min.
Key Features
- Advanced Trench Process Technology
- High density cell design for low RDS(ON)
- Very low leakage current in off condition
- ESD Protected 2000V HBM
- RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.006 gram
