2N7002KDWS Datasheet | Taitron Components

Enhancement Mode MOSFET (Double N-Channel) Enhancement Mode MOSFET (Double N-Channel) Features - Advanced Trench Process Technology - High density cell design for low RDS(ON) - Very low leakage current in off condition - ESD Protected 2000V HBM - RoHS pliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.006 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VDSS VGSS ID IDP TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source...