2N7002KDWS Overview
(800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/CW Page 1 of 8 Enhancement Mode MOSFET (Double N-Channel) (T Ambient=25ºC unless noted otherwise) Off Characteristics 2N7002KDWS Symbol V(BR)DSS IDSS IGSS Description Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Characteristics (Note3) Min.
2N7002KDWS Key Features
- Advanced Trench Process Technology
- High density cell design for low RDS(ON)
- Very low leakage current in off condition
- ESD Protected 2000V HBM
- RoHS pliance
- Max. 1
- Max. 2.5 3.0 4.0
- Unit V Ω mS
- Max. 35 5 10
- Max. 20 40
