Datasheet Details
| Part number | 2N7002KDWS |
|---|---|
| Manufacturer | TAITRON |
| File Size | 400.80 KB |
| Description | Double N-Channel MOSFET |
| Datasheet |
 2N7002KDWS Datasheet
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General Description
2N7002KDWS
VDSS VGSS
ID IDP
PD
TJ TSTG ESD
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed
Drain Power Dissipation
Junction Temperature Storage Temperature Range Gate-Source ESD Rating
TA=25°C TA=75°C
60 ±20 115 800 200 120 +150 -55 to +150 2000
Unit
V V
Key Features
- Advanced Trench Process Technology.
- High density cell design for low RDS(ON).
- Very low leakage current in off condition.
- ESD Protected 2000V HBM.
- RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.006 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.