2N7002KDW Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 5.3Ω@4.5V 340mA SOT-363 - 6 5 4 1 2 3 FEATURE z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain-Source voltage Gate-Source voltage ±20 Drain Current 340 mA Power Dissipation Junction...