MAXIMUM RATINGS
(Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 60 V VGS Gate-Source voltage ±20 V ID Drain Current 340 mA PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 833 ℃ /W 1 H,Aug,2016 MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified Parameter Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage* Zero Gate Voltage Drain Current Gate –Source leakage current Drain-Source On-Resistance* Diode Forward Voltage Symbol Test Condition VDS VGS(th) IDSS IGSS1 RDS(on) VSD VGS = 0V, ID =250µA VDS =VGS, ID =1mA VDS =48V,VGS = 0V VGS =±20V, VDS = 0V VGS = 4.5V, ID =200mA VGS =10V,ID =500mA VGS=0V, IS=300mA Recovered charge Qr VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs Dynamic Characteristics** Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics** Turn-On Delay Time Turn-Off Delay T...
JCET
