2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power MV MOSFET technology
Voltage controlled small signal switch
Low input Capacitance
Fast Switching Speed
Low Input / Output Leakage
Applications
Battery operated systems
Solid-state relays
Direct logic-level interface：TTL/CMOS
Absolu
N-Channel Enhancement Mode Field Effect Transistor
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2N7002KDW
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
340mA
● RDS(ON)( at VGS=10V)
＜2.5ohm
● RDS(ON)( at VGS=4.5V)
＜3.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage
Applications
● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
TA=25℃ @ Steady State
Drain Current
ID
TA=70℃ @ Steady State
Pulsed Drain Current A
IDM
±20
V
340 mA
272
1.
2N7002KDW Datasheet
