Datasheet Details
| Part number | 2N7002KDW |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 837.13 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KDW-YangzhouYangjie.pdf |
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Overview: 2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) ＜2.5ohm ● RDS(ON)( at VGS=4.5V) ＜3.0ohm ● ESD Protected Up to 2.
| Part number | 2N7002KDW |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 837.13 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KDW-YangzhouYangjie.pdf |
|
|
|
● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current ID TA=70℃ @ Steady State Pulsed Drain Current A IDM ±20 V 340 mA 272 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 357 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KDW F2 72K 3000 30000 120000 7“ reel S-E058 Rev.3.0,24-Feb-20 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com 2N7002KDW ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS1 IGSS2 IGSS3 VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Dynamic Parameters VGS= 0V, ID=250μA VDS=60V,VGS=0V VGS= ±20V, VDS=0V VGS= ±10V, VDS=0V VGS= ±5V, VDS=0V VDS= VGS, ID=250μA VGS= 10V, ID=300mA VGS= 4.5V, ID=200mA IS=300mA,VGS=0V 60 V 1 μA ±9 μA ±200 nA ±100 nA 1 1.4 2.5 V 1.3 2.5 Ω 1.4 3.0 1.2 V 340 mA Input Capacitance Output Capacitance Reverse
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N7002KDW | N-channel MOSFET | JCET |
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2N7002KDW | N-Channel MOSFET | Pan Jit International |
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2N7002KDW | Dual N-Channel MOSFET | SeCoS |
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2N7002KDW | Dual N-Channel MOSFET | WEITRON |
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2N7002KDW | Dual N-Channel MOSFET | MCC |
| Part Number | Description |
|---|---|
| 2N7002K | N-channel MOSFET |
| 2N7002KC | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCDWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCE | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCW | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCWQ | N-Channel Enhancement Mode Field Effect Transistor |